| 摘要 |
<p>The invention is a method of doping materials grown by chemical vapor deposition which comprises the steps of: (1) providing a substrate (30) in a CVD chamber (12); (2) producing an ion beam (26) from a desired ion dopant source (24) in an ion beam forming chamber (18); (3) depositing a layer of CVD material on the substrate; and (4) impacting the ion beam onto the surface of the CVD material while it is growing by chemical vapor deposition.</p> |
