发明名称 CATALYST AND PLASMA ASSISTED NUCLEATION AND RENUCLEATION OF GAS PHASE SELECTIVE LASER DEPOSITION
摘要 A method and apparatus for selectively depositing a layer of material from a gas phase (24) to produce a part (2) comprising a plurality of deposited layers (42). The apparatus includes a computer (50) controlling a directed energy beam, such as a laser (46), to direct the laser energy into a chamber (22) substantially containing the gas phase (24) to preferably produce photodecomposition or thermal decomposition of the gas phase (24) and selectively deposit material within the boundaries of the desired cross-sectional regions of the part (2). For each cross section, the aim of the laser beam is scanned (48) over a target area (26) and the beam is switched on to deposit material within the boundaries of the cross section. Each subsequent layer (42) is joined to the immediately preceding layer (42) to produce a part comprising a plurality of joined layers (42).
申请公布号 WO9302846(A1) 申请公布日期 1993.02.18
申请号 WO1992US06588 申请日期 1992.08.07
申请人 BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM 发明人 MARCUS, HARRIS, L.;ZONG, GUISHENG;THISSELL, W., RICHARDS
分类号 B29C67/00;C23C16/01;C23C16/04 主分类号 B29C67/00
代理机构 代理人
主权项
地址