发明名称 |
Light emitting diode device and method for producing same |
摘要 |
A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3 DEG from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.
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申请公布号 |
US5187547(A) |
申请公布日期 |
1993.02.16 |
申请号 |
US19900616768 |
申请日期 |
1990.11.19 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
NIINA, TATSUHIKO;OHTA, KIYOSHI;NAKATA, TOSHITAKE;MATSUSHITA, YASUHIKO;UETANI, TAKAHIRO;FUJIKAWA, YOSHIHARU |
分类号 |
H01L33/00;H01L33/20;H01L33/34;H01L33/40;H01L33/44 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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