| 摘要 |
A field effect transistor includes a semi-insulating substrate, first conductivity type source and drain regions disposed in the substrate, a first conductivity type channel layer having a lower dopant concentration than the source and drain regions and disposed between and connecting the source and drain regions, and a second conductivity type buried region disposed in the substrate adjacent to and contacting the first conductivity type channel layer but not contacting the source and drain regions. The leakage current from the channel region is greatly reduced without increasing the parasitic gate capacitance.
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