| 摘要 |
The present invention introduces an effective way to produce a thin film capacitor utilizing a high dielectric constant material for the cell dielectric through the use of a single transition metal, such as Molybdenum, for a bottom plate electrode which oxidizes to form a highly conducting oxide. Using Molybdenum, for example, will make a low resistive contact to the underlying silicon since Molybdenum reacts with silicon to form MoSix with low (<500 mu OMEGA -cm) bulk resistance. In addition, Mo/MoSix is compatible with present ULSI process flow or fabricating DRAMs and the like.
|
