| 摘要 |
A solid state image sensing device of this invention includes signal charge storage units, arranged in a matrix form on a semiconductor substrate, for storing a signal charge generated by photoelectric conversion, signal charge reading units for reading out the signal charge from the signal charge storage units, a pixel signal processing unit, provided in each of a plurality of blocks obtained by dividing the matrix arrangement of the signal charge storage units, for detecting a luminance to output a control signal corresponding to the luminance, a signal charge extracting unit provided adjacent to each of the signal charge storage units and controlled by the control signal obtained in a corresponding block to extract an excessive signal charge from the signal charge storage unit of the block, and coupling elements for connecting adjacent pixel signal processing units.
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