| 摘要 |
PURPOSE:To enable the formation of a superconducting contact of a complete planar structure by disposing an insulating layer over a resist pattern and a first superconducting wiring layer, removing the resist pattern and the insulating layer thereon, and forming on the surface thereof a second superconducting wiring layer. CONSTITUTION:A first superconducting wiring layer 2 is disposed on a substrate 1, a resist pattern 3 for forming a superconducting contact is formed on the superconducting wiring layer 2, and etching is performed through the resist pattern to form a contact region 2A. Then, after disposing an insulating layer 4 over the resist pattern 3 and the first superconducting wiring layer 2, the resist pattern 3 and the insulating layer 4 on the resist pattern 3 are removed, and a second superconducting wiring layer 7 is formed on the surfaces of the insulating layer 4 and the exposed first superconducting wiring layer 2A. Further, for instance, a process is added during these steps, where a planarized layer 5 such as spin-on glass or organic silicon is deposited, and the planarized layer 5 is etched away to the surface of the insulating layer 4 except for the portion 5A of the planarized layer 5 which penetrated into the groove 6 formed between the insulating layer 4 and the contact region 2A. |
