| 摘要 |
PURPOSE:To elevate the efficiency of annealing of a semiconductor device by a method wherein a laser beam is irradiated to a semiconductor substrate being ion implanted through a newly formed thickness of film or another kind of insulating film. CONSTITUTION:A P type substrate 1 is oxidized to form oxidized layers 2 having the 500Angstrom thickness on the both main faces, As ions are implanted through the oxidized film to form an implanted region 4. After an SiO2 film 5 having 700Angstrom thickness is formed on one side main face by the CVD method, a ruby laser beam 6 is irradiated to it to anneal the impurity implanted region 4. Accordingly, because the insulaing films having respectively the most suitable thickness for ion implantation and laser irradiation can be used, respective efficiency is improved. Especially the efficiency of annealing by laser beam becomes maximum when the thickness of the insulating film is lambda/4n, (lambda: wave length of incident beam, n: refractive index of insulating film). |
