| 摘要 |
PURPOSE:To simplify the formation of a pattern by a method wherein ions are implanted in accordance with a prescribed pattern in the surface layer parts of a film to be processed being formed on the surface of a substrate or of a film on the substrate to form quality changed layers, and the film to be processed is etched using the layers as masks. CONSTITUTION:After a silicon oxide film 2 and a polycrystalline silicon film 3 are stacked in order on a silicon semiconductor substrate 1, ions of oxygen, etc., are implanted in the surface layer of the polycrystalline silicon film to form locally quality changed layers 8. Using the quality changed layers 8 as masks, plasma etching is performed in CF4 gas plasma 6, for example, to form a fine pattern of polycrystalline silicon. Accordingly, because the fine pattern can be formed directly without necessitating a photo-etching process, the manufacturing process is shortened and the defect of pattern generating by the adhesion of foreign material and refuse can be reduced. |
