发明名称 INTERNAL SIGNAL DETECTOR INCORPORATED INTO SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: To shorten a debugging time by detecting a defect of an internal signal by an internal signal detector with a signal which is outputted sequentially through a shift register. CONSTITUTION: Signals of signal generating devices SG and SG' are outputted to 11 -1i . A control signalϕA goes up to H and transmission TRs MA1 -MAi are turned on. Then the voltages of the lines 11 -1i are latched by latch circuits RC1 -RCi through the TRs MA1 -MAi , whose voltages are passed through the TRs MB1 -MBi and outputted to the outside through a shift register SR in sequence with control signalsϕB1 -ϕBi .
申请公布号 JPH0536300(A) 申请公布日期 1993.02.12
申请号 JP19910314537 申请日期 1991.11.28
申请人 SAMSUNG ELECTRON CO LTD 发明人 HIYOUNNSEOBU JIEON
分类号 G01R31/28;G11C29/00;G11C29/02;G11C29/12;G11C29/48;G11C29/50 主分类号 G01R31/28
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