| 摘要 |
<p>PURPOSE:To form a tapered emitter with high precision by applying the fine machining technology utilizing the crystallization of a compound semiconductor material to a metal material. CONSTITUTION:A conical pattern epitaxially grown from the crystal face of a compound semiconductor is formed with a GaAs layer, and a silicone oxide film 8 serving as a formwork layer is formed around the pattern. An opening section is formed on the silicone oxide film 8 except for a tapered conical section, a tungsten film 10 is formed on the inside of the silicone oxide film 8, and the tungsten film 10 is machined into the shape along the formwork of the silicone oxide film 8.</p> |
