| 摘要 |
PURPOSE:To change a phase in such a manner that the strength of transmitted light in light transparent regions does not decrease to zero and to easily correct the defect of phase shifters of the optical mask which is used for optical lithography used in the production of semiconductor devices, etc., and has the phase shifters for shifting the phase of the transmitted light. CONSTITUTION:The light transparent region on a mask substrate 10 where a light shielding film 12 is not formed is divided to the 1st region where the phase shifter 16 for 90 deg. for shifting the phase of the transmitted light by 90 deg. is formed, the 2nd region where the phase shifter 18 for 270 deg. for shifting the phase by 270 deg. is formed and the 3rd region where the phase shifter 16 for 90 deg. and the phase shifter 18 for 270 deg. are not formed. The optical mask is so formed that the 1st region and the 2nd region do not overlap on each other and are disposed via the light shielding region or the 3rd region held therebetween. |
