| 摘要 |
PURPOSE:To prevent conduction failures between an outside terminal and a lead wire by electrically connecting an outside terminal of a semiconductor pellet with the lead wire by way of metallic wiring. CONSTITUTION:There is formed metallic wiring 8 deposited by a vapor deposition process, a sputtering process, or CVD method interposing an insulator 7, on a pellet-mounted side of an insulation resin film substrate 2 on one end of a lead wire 6 at least on the side of a semiconductor pellet 4. An outside terminal 4A of the semiconductor pellet 4 is electrically connected with the lead wire 6 by way of metallic wiring 8. This construction makes it possible to prevent a short circuit on one end of the lead wire and enhance the electric reliability of a semiconductor device. It is also possible to enhance the yield of an assembling process for the semiconductor device. This construction makes it possible to standardize the lead wiring as well. |
