| 摘要 |
PURPOSE:To obtain a GaP single crystal to be used as a substrate for epitaxial growth of a green luminous element having no decrease of luminence by making Si concentration not exceeding 1X10<17>atoms/cm<3> and/or O-concentration not exceeding 7X10<16>atoms/cm<3>. CONSTITUTION:A condition of suitable impurity concentration as the substrates W1 to W5 for epitaxial growth of a green light emitting diode having no decrease of luminance is that Si concentration is not exceeding 1X10<17>atoms/cm<3> or, in case Si concentration is not less than 1X10<17>, O-concentration is 7X10<16>atoms/cm<3>. That is, in order to have suitable brightness of the green light emitting diode, Si concentration can be not exceeding 1X10<17>atoms/cm<3> and/or O-concentration can be not exceeding 7X10<16>atoms/cm<3>. Thereby, a GaP single crystal to be suitably used as the substrates W1 to W5 for epitaxial growth of the green light emitting element having no decrease of luminance can be obtained. |
