发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To effectively reduce aging deterioration of a semiconductor device formed by resin sealing by providing an electrode for applying a voltage entirely separately from an integrated circuit of a functional region to a region except the functional region on a semiconductor chip. CONSTITUTION:In a semiconductor device formed by resin-sealing a semiconductor chip 1a, an electrode for applying a voltage to a Test Element Group(TEG) 14 formed on a region except a functional region 11 on the chip 1a, is provided. That is, a suitable voltage is applied to the TEG 14 to maintain the region except the region 11 of the chip 1a at an arbitrary potential. Thus, if total numbers of cation and anion existing in the resin-sealed device are finite, ions contributing to corrosion of an integrated circuit are reduced in the amount of ions attracted to the TEG 14, and corrosions of pads 12, 15 due to the ions are reduced as a whole.</p>
申请公布号 JPH0536905(A) 申请公布日期 1993.02.12
申请号 JP19910212664 申请日期 1991.07.30
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HASHINAGA TATSUYA
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
代理机构 代理人
主权项
地址