| 摘要 |
<p>PURPOSE:To enlarge a current crossing a junction by a method wherein a multi- carrier flows in one of two conductive layers in the direction parallel to a pn or pin junction plane and also a forward bias voltage is applied to the pn or pin junction. CONSTITUTION:A pn or pin junction comprising an n-type layer 12 and a p-type layer 13 is formed on a substrate 11, a forward bias voltage is applied to the junction, and further the n-type layer 12 and the p-type layer 13 are formed so that a multi-carrier may move in parallel to a junction plane in a magnetic field. Accordingly, the n-type layer 12 and the p-type layer 13 operate as a region for generating a Hall voltage and the generated Hall voltage is used as a forward bias voltage, so that a re-coupling is lost in the junction, the carrier is again biased to compensate it, and, if the Hall voltage is enlarged, the carrier is still more biased. Thus, a current crossing the junction can be enlarged.</p> |
