| 摘要 |
PURPOSE:To obtain high capacitance material which improves high dielectric constant, non-ferroelectric property and temperature dependent characteristics of dielectric constant and also ensures a high withstand voltage by expressing a material to form a capacitor with a specific formula. CONSTITUTION:A high dielectric constant film 32 expressed by (Sr1-xCax)TiO3 is formed and subsequently capacitor electrodes 33a, 33b are formed by selectively etching a high dielectric constant film 32 and an electrode layer 31 for capacitor. A material which forms a capacitor is expressed by the formula, namely, (Sr1-x-yCaxMay)(Tiz-wMbw)O3. In this formula, x=0 to 0.2, y=0.001 to 0.01 and Ma is a kind of La, Bi, Sb, Y and lanthanum family element and Mb is a kind of Nb, V, Ta, Mo and W. Thereby, a capacitor material which ensures high dielectric constant, anti-ferroelectric property and good temperature dependent characteristic of dielectric constant can be obtained. |
