| 摘要 |
PURPOSE:To obtain a growth method of SiC crystal which has little crystal defect and is excellent in surface morphology. CONSTITUTION:In crystal whose main component is SiC of hexagonal or rhombohedral crystal, a (0001) face substrate 1a is used. After trenches 11 are formed on the substrate 1a, the same crystal as the substrate 1a is grown. Thereby surface morphology is very enhanced, the yield in a production process is improved, and a light emitting diode remarkably excellent in luminous efficiency can be obtained. |
