发明名称 SEMICONDUCTOR MATERIAL HAVING ZNSE
摘要 PURPOSE:To increase luminance by forming a substrate or a clad layer with ZnSe. CONSTITUTION:For instance, a GaInP group layer 14 for double-heterostructure is formed on a ZnSe substrate 10. The GaInP group layer 14 consists of an n-ZnSe clad layer 11, a p-GaInP active layer 12 and a p-ZnSe clad layer 13. The GaInP layer 14 is made to grow on the ZnSe substrate 10 by a method to be selected from the liquid phase epitaxial, molecular beam epitaxial metal organic chemical vapor deposition, vapor phase epitaxial method, etc., respectively. Thereby, the ZnSe substrate 10 has permeability to red illuminance while having no absorption of light thus to increase the luminance.
申请公布号 JPH0537019(A) 申请公布日期 1993.02.12
申请号 JP19910153863 申请日期 1991.05.28
申请人 MITSUBISHI CABLE IND LTD 发明人 WATABE SHINICHI;TADATOMO KAZUYUKI
分类号 H01L33/08;H01L33/28;H01L33/30;H01S5/00 主分类号 H01L33/08
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