| 摘要 |
PURPOSE:To realize boosting and maintaining the gate electrode voltage of N-channel MOSFET to be used as high-side switch without increasing a chip area and while a high-speed operation is made possible and ON resistance is held low. CONSTITUTION:A capacitor to be charged with electricity, when a source electrode 7 reaches a ground potential, is provided as boosting circuit 11 and a potential detection circuit 12 for monitoring a gate-source voltage Vgs is also provided at an apparatus. When Vgs drops to a predetermined value even while the apparatus operates on full duty, a gate control circuit 13 lowers the potential of a gate electrode 8 by a signal from the potential detection circuit 12 to turn OFF MOSFET1 to restart the boosting circuit 11. |
