| 摘要 |
PURPOSE:To shorten a manufacturing period after ROM constitution, in a semiconductor device containing an ROM of contact change-over. CONSTITUTION:After an interconnection 7 is formed, a contact hole is bored, and the interconnection 7 is brought into contact with a drain diffusion layer 2 and the like, via a buried contact hole 8 formed by a selective CVD method or the like. Since contact is performed after the interconnection is formed, once of photo resist pattern after ROM constitution is saved and the manufacturing period can be shortened. |
