| 摘要 |
<p>PURPOSE:To suppress the increase of a chip area by decreasing a reference bit lines concerning a non-volatile semiconductor memory to be able to perform the programming conposed of a memory cell transistor having a floating gate such as an EPROM. CONSTITUTION:The memory is the programmable non-volatile semiconductor memory to compare the output of a memory cell transistor TC (TC00-TC22) and the output of a reference transistor TR with a sense amplifier B6 and read the data, and controls the gate voltage of the above-mentioned reference transistor TR apart from the gate voltage of the above-mentioned memory cell transistor TC (TC00-TC22). At the time of the usual reading and at the time of the program verification, the gate voltage of the above reference transistor TR is changed.</p> |
