| 摘要 |
PURPOSE:To improve integration of a semiconductor memory device having a capacity element in a groove and to provide a method for manufacturing the same. CONSTITUTION:A semiconductor memory device comprising a first high concentration impurity region 700 self-aligned with one charge storage electrode 210 of a capacity element formed in a groove, and a second high concentration impurity region 710 self-aligned with other charge storage electrode 300, wherein the latter region is a source or a drain of a selected transistor. A gate electrode of a selective transistor self-aligned with other electrode may be provided instead of the latter region. In this case, the first high concentration impurity region becomes the source or drain of the selective transistor. In such a memory device, the above-described region is formed in a self-alignment manner, and a capacity electrode is connected to the selective transistor. |
