| 摘要 |
In manufacturing the buried laser diode including an inverse mesa structure of active, clad and cap layrs (3,4,5) formed on a substrate, current interrupt layers (6,7) and electrodes, the method comprises putting the buried laer diode chip into a plasma generating apparatus to diffuse hydrogen atoms into the laser chip and heat treating the laser chip at 350 deg.C and in an H2 atmosphere without plasma generation, thereby inactivating the crystal defects of the boundary region of the inverse mesa structure to prevent the thermal demage at the boundary region of the inverse mesa structure to be exposed to high temperature.
|
