| 摘要 |
A method for manufacturing silicon dioxide load resistor comprises (a) forming low-temperature deposited oxide (1) on the silicon substrate (0), (b) forming silicon dioxide (2a) on the oxide film (1) and preparing current path (5) crosswise on the center of silicon dioxide (2a) by implanting phosphorus ions, (c) forming doped polysilicon (7) for connection part, and (d) forming metal (6) on the front surface after isolating the connection part from other parts by insulating material (8).
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