PATTERNING METHOD OF POLY-SILICONE

摘要

The method for forming a polysilicon pattern comprises (a) forming an oxide film (2) and a polysilicon layer (3) on the semiconductor substrate (1) and impregnating an impurity into the layer (3), (b) lifting-off a glaze and a natural oxide film (4) by the first etching process, (c) forming a photoresist pattern (5') using a mask pattern (6), (d) lifting-off a residue (4') and a particle with HF or NH4F soln. by the second etching process, and (e) dry-etching the layer (3) to form a polysilicon pattern (3').