| 摘要 |
For avoiding the contamination and the damage of the semiconductor substrate and for performing necessary treatments without heating in a furnace, only the surface of the substrate is heated by applying the burning flame of a mixed gas of hydrogen and oxygen to it. An oxidizing or reducing treatment can be performed by changing the ratio of hydrogen to oxygen. A device used in this method comprises a first conduit tube (6) for introducing hydrogen, a second conduit tube (7) for introducing oxygen, a flame generating means (5) for generating the flame downward by burning hydrogen and oxygen in a mixed state and within the wider range than the diameter of an untreated semiconductor substrate (1), flow rate regulating means (8), (9) which are provided in the middles of the first and second conduit tubes respectively and regulate the flow rates of gases flowing therethrough respectively, and carrying means (2), (3), (14) which are provided under the flame generating means and carry the untreated semiconductor substrates. |
