发明名称
摘要 A superconductive material with a superconducting critical temperature of at least 77 DEG K. comprising 20 at. % Nb, 10 at. % Si, 10 at. % Al and 60 at. % O is provided by simultaneous vapor-phase physical deposition or sputtering of Nb, Si and Al onto a heated sapphire substrate under oxygen-containing atmosphere, followed by a rapid quenching or post-oxidization of Nb-Si-Al ternary system composition having an Nb/Si/Al atomic ratio of 2/1/1. The high critical temperature allows abundantly existing, cheap available liquid nitrogen to be used as a cryogen for developing superconductivity.
申请公布号 JPH0510285(B2) 申请公布日期 1993.02.09
申请号 JP19860011728 申请日期 1986.01.22
申请人 KAGOSHIMA DAIGAKUCHO 发明人 OOGUSHI TETSUYA
分类号 H01B13/00;C01B33/00;C01G1/00;C01G33/00;H01B12/00;H01B12/06;H01L39/12 主分类号 H01B13/00
代理机构 代理人
主权项
地址