| 摘要 |
PURPOSE:To provide the technique of smoothing the profile which is formed at the time of etching away the insulating film layer on a substrate and leads to various kinds of problems. CONSTITUTION:A silicon oxide film layer 4 is formed on a silicon substrate 2 (a). Ar<+> is then implanted by ion implantation into the surface of the silicon oxide film layer 4 to form a damage layer 6 of a high etching rate (b). A photoresist 8 is then formed as a mask and is chemically etched to selectively remove the silicon oxide film layer 4 to a taper shape (c). Finally, the entire part of the silicon substrate 2 is heat treated. The damage layer 6 is recovered by this annealing and a smooth taper 14 in which a kink shape 12 does not exist formed (e). |
