发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To prevent occurrence of a malfunction as prior art by selectively setting whether a reference potential is dropped or not at the stage of an assembly. CONSTITUTION:When a switching pad 5 is not connected to an external power source pin 2 or not grounded, an external power source potential Vex of the pin 2 is dropped by a controller 3, and an internal power source potential Vin equal to a reference potential Vref is output from an internal power source 4, whereas when the pad 5 is connected to the pin 2 or grounded, the potential Vin equal to the potential Vex is output by power source supply means of the controller 3. Accordingly, whether the potential Vex is dropped or not can be selectively set at the stage of an assembly, and occurrence of a malfunction like when the internal power source potential is selectively switched under the control of an external clock signal like prior art can be prevented.
申请公布号 JPH0529580(A) 申请公布日期 1993.02.05
申请号 JP19910181391 申请日期 1991.07.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUKIAGE TAKAHIKO
分类号 H01L27/10;G11C11/401;G11C11/407;H01L21/8242;H01L27/108 主分类号 H01L27/10
代理机构 代理人
主权项
地址