| 摘要 |
<p>PURPOSE:To realize size reduction, speedy operation, and power consumption reduction and to enable mass-production by forming picture elements, arrayed in a matrix on a sapphire substrate, and a vertical and a horizontal scanning circuit of SOS thin film transistors. CONSTITUTION:On the sapphire substrate 1, the picture elements 2 are arrayed in the matrix and each picture element is equipped with an SOS(silicon on sapphire) MOS transistor switch 3 formed of single crystal silicon on the sapphire substrate 1 by epitaxial growth. Further, the vertical scanning circuit 4 for driving the gates of the SOS MOS transistor switches 3 and the horizontal scanning circuit 5 for transferring a video signal to respective signal lines 6 in order are formed on the same sapphire substrate 1. Then MOS transistors necessary in the vertical scanning circuit 5 and horizontal scanning circuit 5 use SMOS transistors.</p> |
