发明名称 SEMICONDUCTOR WAFER PROCESSING DEVICE
摘要 <p>PURPOSE:To enable a semiconductor wafer processing device to accurately process a semiconductor wafer by a method wherein the semiconductor wafer is kept constant in temperature. CONSTITUTION:A semiconductor wafer 6 is placed on a lower electrode 4, an opening is provided inside the lower electrode 4, cooling gas is made to flow through the opening 8 at the flow rate determined by a mass flow controller 10 to directly cool the semiconductor wafer 6 from its rear side, and furthermore coolant is made to flow through a coolant path 11 to indirectly cool the semiconductor wafer 6 from its rear surface. A fluorescent thermometer 12 is buried into the lower electrode 4, the measurement output of the thermometer 12 is given to the mass flow controller 10, the controller 10 keeps the semiconductor wafer 6 constant in temperature responding to the measurement output concerned or controls the coolant in temperature basing on the measurement output to keep the temperature of the semiconductor wafer 6 constant.</p>
申请公布号 JPH0529264(A) 申请公布日期 1993.02.05
申请号 JP19910181450 申请日期 1991.07.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 ODA TAKAFUMI
分类号 H01L21/265;H01L21/302;H01L21/3065;H01L21/68;H01L21/683 主分类号 H01L21/265
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