| 摘要 |
PURPOSE:To increase a backward withstand voltage between base emitters by a system wherein a base compensating region to be provided in a bipolar transistor is brought into contact with a base and a collector layer but kept apart from an emitter layer when it is manufactured. CONSTITUTION:A bipolar transistor is made in such a way that an N<-> type collector layr 2 is grown on an N<-> type semiconductor substrate 1; a P type base layer 3 is diffusion-formed thereon and an N<+> type emitter region 4 is provided within the P type base layer. Then, around the region 4, a P<+> type external connected region 6 which comes from the layer 3 into the layer 2 is diffusion-formed in such a manner as surrounding the same, and a P<+> type compensating regions 5 made in stripe- pattern or fret-work are arranged. At this time, the regions 5 are formed extending from the bottom surface of the layer 3 over the upper part of the layer 2 and constructed so as not to come close to the region 4 with the layer 3 interposed therebetween. With such a construction, the backward withstand voltage between the base emitters is not only increased, but also a junction capacity between them becomes smaller and a large capacity of current can be dealt with. |
