| 摘要 |
A method for manufacturing a semiconductor having capacitor characteristic comprises (a) forming field oxide film (2), gate (3) and insulation film (4) on the substrate (1), (b) forming boron phosphorus silicate glass (5) on the front surface and forming storage node and bit line contact window by masking and etching, (c) depositing 1000 angstroms Ta (6) on the front surface, (d) depositing dielectric layer (7) on (6) and forming bit line contact window by photoresist (8) masking and etching, (e) removing (8), depositing Ta (9) and forming oxide film (10) by etching, and (f) depositing metal (12) after forming bit line contact window by photoresist (11) masking and etching.
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