| 摘要 |
The invention relates to a field-effect transistor with a long gate. With a view to enhancing the gain and the pass band at high frequencies, a choke (12) is connected at the end of the gate (3) opposite the end on which at least the bias (Vg s) and the signal (7 to 10) are connected. The gate metallisation is matched: it includes a land (10, 11) for connecting to each of its ends. Applications to UHF signals. <IMAGE>
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