| 摘要 |
PURPOSE: To provide a method for producing a low-voltage power MISFET through few photograph processes. CONSTITUTION: A polysilicon layer 3 is structured in a 1st photographing process, and the field of cell 8 and edge areas 16 and 17 are produced. Next, a 1st oxide layer 2 is formed and the layer is opened between the cell 8 and the edge region and between an edge 4 and the cell 8 in a 2nd photographic process. Next, a metal layer 18 is formed, and this layer is cut between the cell and the edge 4 in a 3rd photographic process. Thus, a magnetoresistive element and a channel stopper 9 are produced.
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