| 摘要 |
PURPOSE:To obtain a semiconductor device having an element formed on an epitaxial layer by forming the epitaxial layer which is insulated from a silicon substrate. CONSTITUTION:A silicon oxide film layer 4 is formed on a semiconductor substrate 2, and an aperture 14 is provided on the silicon oxide layer 4. Silicon carbide is grown in such a manner that it is protruding from the aperture 14, and a silicon carbide seed crystal layer 16 is formed. Then, an oxidizing operation is conducted. As a result, a field oxide layer is coupled at the lower part of the aperture 14, and the silicon carbide seed crystal layer 16 is insulated from the substrate 2. Subsequently, a silicon carbide growth layer is obtained by conducting an epitaxial growth method from the above-mentioned silicon carbide seed crystal layer 16. An element is formed on the growth layer 22. The silicon carbide layer is insulated from the substrate 2, and it has a uniform orientation. Accordingly, there is no electrostatic capacitance by the PN junction with the substrate 2, and a high speed operation can be conducted. Also, as orientation is uniform, the control in the manufacturing process can easily be conducted.
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