| 摘要 |
PURPOSE:To reduce a standby current at a high temperature of a pseudo-static RAM, etc., by providing a substrate potential generator and varying the value of a substrate potential according to a temperature of the semiconductor substrate or the circumference of a device. CONSTITUTION:The semiconductor device comprises a substrate potential generator VSG. The generator VSG has a temperature identifier TD, level detectors LVCP, LVCN, and substrate potential output circuits VGP1, VGP2, VGN1, VGN2. The identifier TD identifies the temperature of a semiconductor substrate, and selectively form its output signal TC. The detectors LVCP, LVCN selectively switch the detection level according to the signal TC of the identifier TD. The circuits VGP1, VGP2, VGN1, VGN2 are selectively or steadily set to operating states. Thus, a threshold voltage of a MOSFET is selectively increased at the time of a high temperature, and its subthreshold current is reduced. |
