发明名称 PHOTO-OR RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, PRODUCTION OF PHOTOMASK, AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To provide a photo-or radiation-sensitive compsn. having enough sensitivity for light and suitable for lithography using short wavelength light such as far UV ray. CONSTITUTION:The polymer or oligomer as the main component has a siloxane structure (-Si-O-) as the skeleton of the chemical compsn. This polymer has an end group or side chain group which polymerizes by condensation with an anion or cation seed produced by light or radiation. Thereby, this photo-or radiation-sensitive compsn. becomes insoluble with a solvent after irradiation of light or radiation. In this process, not only an org. solvent is used as a developer but it can be developed with an alkali aq. soln. by providing polarity to the end group. The light or irradiation means visible light, UV ray, far UV ray, vacuum UV ray, X ray, gamma ray, electron beam, ion beam, etc.</p>
申请公布号 JPH0527441(A) 申请公布日期 1993.02.05
申请号 JP19910127776 申请日期 1991.05.30
申请人 MATSUSHITA ELECTRON CORP 发明人 WATANABE HISASHI
分类号 G03F1/26;G03F1/68;G03F7/004;G03F7/029;G03F7/038;G03F7/075;H01L21/027 主分类号 G03F1/26
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