SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a semiconductor device in which the level difference between the block area of a memory cell array and its peripheral area is reduced without increasing the number of processes and which has a structure that can reduce the level difference by dividing the depths of contact holes between A wiring and a word line and the manufacturing method of the device. CONSTITUTION:In a peripheral area A, the dummy sections 8c and 8d of bit lines are simultaneously formed with bit lines 8a and 8b in the block area A of a memory cell array in the same layer and the dummy section 12a of a plate electrode is simultaneously formed with a plate electrode 12a in the block area B in the same layer. In the area A, in addition, a word line 4 is connected to the dummy sections 8c and 8d through a contact hole 7b and the dummy sections 8c and 8d of bit lines are connected to Al wiring 15 through another contact hole 16.