| 摘要 |
PURPOSE:To enable a dielectric element to have a high dielectric constant and insulating property by forming an SiO2 film layer and Si-rich SiO2 nitride film layer on an Si substrate. CONSTITUTION:After an oxide film 10 is formed on an Si substrate, an Si-rich SiO2 film is formed in part of the film 10 and the Si area where the Si-rich SiO2 film is precipitated is nitrified so as to form an Si-rich SiO2 nitride film 8. In other words the SiO2 film layer 10 and Si-rich SiO2 nitride film layer 8 are formed on the Si substrate. In addition an SiO2 area 8a and Si3N4 area 8b are formed in the layer 8. Therefore, the SiO2 film layer 10 can have a sufficiently high insulating property and the Si-rich SiO2 nitride film layer 8 can have an insulting property in the SiO2 area 8a and at the same time can be increased in dielectric constant in the Si3N4 area 8b. |
