| 摘要 |
PURPOSE:To make the charge accumulating capacity value of a capacitance element sufficiently larger even when the current occupying area of the element is reduced by constituting the capacitance element of a component formed below the bottom surface of a single-crystal semiconductor layer or the sum of components formed below and above the semiconductor layer. CONSTITUTION:One transistor and one capacitance element are treated one unit. The transistor is formed of a single-crystal semiconductor layer, the bottom section of which is separated from a semiconductor substrate 1 by an insulating film 2. The capacitance element is composed of insulating films 6 and 60 constituting the capacitance element, one-side electrode 7 of the element, and electrodes 13 and 130 constituting the second capacitance element, etc., as shown in the figure. In other words, the capacitance element is constituted only of the extremely thin single-crystal semiconductor layer separated from the substrate 1 by the film 2 and a component formed below the bottom section of the semiconductor layer or the sum of the component formed below the bottom surface and another component form on the surface of the single-crystal semiconductor layer. Therefore, the charge accumulating capacity value of the capacitance element can be increased sufficiently. |
