| 摘要 |
PURPOSE: To maximize the surface area of memory cell in the design of three- dimensional stack-type cell capacitor to be used for high-density dynamic random access memory(DRAM) array. CONSTITUTION: This stack-type V-cell(SVC) capacitor is formed from a polysilicon structure 61a1 having a V-shaped cross section positioned at an embedded contact 57a, extended to an adjacent memory node covered with polysilicon 92a, and formed so as to hold a dielectric 91a between them. Addition of V-shaped polysilicon structure 61a1 is for improving storage ability in 70%, without increasing the surface area formed for the ordinary stack-type capacitor cell. |
