GRINDING METHOD FOR FERROELECTRIC SUBSTANCE WAFER

摘要

PURPOSE:To offer the grinding method of a ferroelectric substance where grinding work is accurately executed in short time. CONSTITUTION:A wafer 1 consists of the single crystal of tantalic acid lithium or niobic acid lithium adding Z-axis component in the orientation of a wafer face. In the wafer, grinding speed is different concerning a positive side polarization face + and the negative side polarization face --in spite of relation where the positive side polarization face + and the negative side polarization face -are the surface and back faces of a same thing. The positive polarization faces + have almost same grinding speed with each other and the negative side polarization faces-have almost same grinding speed with each other. The speed of the positive side polarization face f is faster than that of the negative side polarization face. When the plural wafers are simultaneously ground, either of the positive side polarization face + or the negative side polarization face -is arranged so as to simultaneously execute grinding so that grinding work is accurately executed in short time.