发明名称 CHEMICAL VAPOR GROWTH DEVICE
摘要 <p>PURPOSE:To facilitate the control of the thickness of a formed film and elevate the reliability of a device by reducing the formation of a film on the wafer installation part on a tray, the adhesion of foreign matter on a wafer, and others. CONSTITUTION:A wafer heater mechanism 6 is provided besides a tray heater mechanism 3. The entire tray 1 is heated with the tray heater mechanism 3. The wafer heater mechanism 6 heats a wafer 2. Hereby, the adhesion of foreign matter on that area of the tray which the wafer does not occupy can be prevented, so a film can grow without foreign matter adhering to the wafer 2.</p>
申请公布号 JPH0529303(A) 申请公布日期 1993.02.05
申请号 JP19910186218 申请日期 1991.07.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUGANO HIROKI;KISHIBE KENJI
分类号 H01L21/205;H01L21/31;H01L21/67;H01L21/68 主分类号 H01L21/205
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