| 摘要 |
PURPOSE:To provide a means for making a gate electrode which has a fine width, without using lithography technology, in a quantum fine line element. CONSTITUTION:A gate electrode 4, a conductive polycrystalline silicon film 6, and a titanium film 7 are formed in order on a silicon substrate 1 where a projection triangular in cross section is made, and then a ridge part 20 is exposed by etchback, and the titanium film at the surface is removed. After removal of a resist 8, a titanium silicide film 9 is formed by the silicifying reaction by heat treatment not less than 600 deg.C, and next, the titanium silicide film 9 is removed by fluoric acid. Next, a polycrystalline silicon film 60 remains on the ridge part 20, and it is made a gate electrode. |
