| 摘要 |
<p>PURPOSE:To provide the active matrix substrate free from short circuiting defects. CONSTITUTION:Scanning lines 101 coated with insulating films, semiconductor layers 102 coated with gate insulating films 111 constituting thin film transistors(TFTRs), and gate electrodes 103 constituting the TFTRs are laminated to form the intersected parts of the scanning lines 101 and data lines 108 into a multilayered structure. Since the intersected parts of the scanning lines 101 and the data lines 108 are made into the multilayered structure, the short circuiting defects can be eliminated. Since the scanning lines 101 and the gate electrodes 103 of the TFTRs are separately provided, respectively optimum materials can be arbitrarily selected. The provision of the scanning lines 101 in the lower parts of the respective layers is possible and the impression of DC components to a liquid crystal layer is decreased.</p> |
