| 摘要 |
PURPOSE:To reduce the height of the capacitor section of a stacked capacitor type memory cell as compared with the conventional example by simplifying the structure of a capacitor. CONSTITUTION:A U-shaped groove is formed on one side of a silicon layer grown on an N<+> diffusion layer 5. A capacitor is formed of the layer 3 and a cell plate 2 and the layer 3 is used as a storage node. Therefore, bit-line contact can be easily obtained, because the height of a capacitor section is reduced and the distance between a bit line 1 and the surface of a P-type semiconductor substrate 7 becomes shorter. In addition, since the structure of the capacitor section is not complicated, the number of manufacturing processes of this semiconductor storage device can be reduced. |
