| 摘要 |
PURPOSE: To realize highly-reliabile and stabilized operating characteristics by locally doping only one part of silicon pole and connecting a transfer transistor and storage capacitor by using a stack trench type capacitor. CONSTITUTION: An accumulation electrode 9 is formed in the shape of stack trench on an oxide film 5, formed on a P-type silicon substrate 1. An storage capacitor composed of a capacitor dielectric 11, formed on the surface of the electrode 9 and a plate 12, formed in contact with the capacitor dielectric 11, is provided. Further, a source 13 connected with the electrode 9, gate oxide film 14 formed along with the internal side wall of upper trench terminal part and word line 15 formed on the gate oxide film are provided. Further, a drain 16 formed on the surface of silicon between trenches is provided and a transfer transistor in a vertical structure is composed of these elements. Thus, highly- reliabile and stable operating characteristics can be attained. |
