| 摘要 |
<p>Integrated circuits and their production are described. A method for producing very closely juxtaposed electrodes, such as those in charge-transfer shift registers, is provided, wherein a first film of polysilicon (14) is deposited and localized oxidation is performed over a narrow strip to divide the film into two electrodes (15 and 17), whereafter the oxidized area of the film between the two electrodes is completely deoxidized to form a hollowed space in which a third electrode (38) may be placed. Said third electrode, which is also made of polysilicon, is deposited once a thin insulating film has been formed on the sides of electrodes (15) and (17). Since the hollowed space between the first two electrodes is narrow, a raised polysilicon portion is obtained. Thus, when the silicon of the deposited film is etched, electrodes remain only on the areas which previously were raised. A third electrode which is very close to the first two is thereby formed and has no coating other than on the sides of the first two electrodes.</p> |
